IS6816B is a highly integrated smart power stage with built-in high/low side power MOSFETs and gate drivers to achieve higher efficiency at lower output voltages. The product provides high current performance, excellent thermal performance, high efficiency optimized MOSFET design, and internal MOSFET sensing for superior electrical flow measurement accuracy, minimizing switching and conduction losses.

The IS6816B is packaged in a 5 mm x 6 mm QFN package with a single-phase bandload of up to 90A. Operation at up to 1.5MHz switching frequency enables high performance transient response and supports miniaturization of output inductors and input and output capacitors while maintaining industry leading efficiency. In addition, the IS6816B supports high-precision current monitoring and temperature monitoring functions, and is equipped with a full set of protection functions, including positive and negative current limit, over-temperature protection, fault alarm function, etc. 

Product parameters

Input voltage: 2.5V~16V

Output current: 90A

Frequency: up to 1.5MHz

Efficiency: 95%

Package: QFN 5x6 41PIN

● High current efficiency, wide input voltage range 2.5V-16V

● Compatible with 3.3V three-state PWM signal

● Single phase up to 90A DC output current

● Support current monitoring and temperature monitoring function

● Optional OCP limit

● Starting undervoltage protection and voltage underlock (UVLO)

● Equipped with full fault detection and protection function

● 5uA/A IMON

● 8mV/°C TMON

● Operating frequency up to 1.5MHz

● Optimized process, better conversion efficiency and dynamic load adaptability, power density and volume balance

● High current, high efficiency, low duty cycle operation and full fault detection and protection, ideal for high current multiphase applications